Micromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects

Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notch...

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Bibliographic Details
Main Authors: Dutta, S. (Contributor), Siddiqui, Saima Afroz (Contributor), Currivan-Incorvia, Jean A. (Contributor), Ross, Caroline A. (Contributor), Baldo, Marc A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2016-04-06T20:53:07Z.
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