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|a Hadi, Sabina Abdul
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|a MIT Materials Research Laboratory
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Microsystems Technology Laboratories
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|a Fitzgerald, Eugene A.
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|a Milakovich, Tim
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|a Bulsara, Mayank
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|a Polyzoeva, Evelina Aleksandro
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|a Fitzgerald, Eugene A.
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|a Hoyt, Judy L.
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|a Milakovich, Tim
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|a Bulsara, Mayank
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|a Fitzgerald, Eugene A.
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|a Hoyt, Judy L.
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|a Nayfeh, Ammar
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|a Polyzoeva, Evelina Aleksandro
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|a Theoretical efficiency limits of a 2 terminal dual junction step cell
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2016-05-23T01:15:19Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/102590
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|a In this paper we present theoretical analysis for upper efficiency limit of a novel 2 terminal dual junction stepcell. Results show that step cell design relaxes bandgap requirements for efficient tandem cell. While conventional tandem cell with optimized bandgap combination (1.64 / 0.96 eV) has the highest efficiency (45.78 %), the step-cell design provides significant efficiency improvement for cells with non-optimized bandgap values. Efficiency upper limit for Si based step-cell with top cell bandgap equal to 1.41 eV (~ GaAs), efficiency upper limit increases from ~21% in conventional tandem cell to 38.7% for optimized step-cell design. Step-cell design provides opportunity for wider selection of materials used in tandem solar cell applications.
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|a en_US
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|a Article
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|t Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
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