Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states

Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect (SSE), that is, measuring the transverse thermoelectric response to a...

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Bibliographic Details
Main Authors: Jiang, Zilong (Author), Masir, Massoud Ramezani (Author), Tang, Chi (Author), Xu, Yadong (Author), MacDonald, Allan H. (Author), Shi, Jing (Author), Chang, Cui-zu (Contributor), Moodera, Jagadeesh (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor), Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2017-07-10T17:45:51Z.
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Summary:Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect (SSE), that is, measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a heterojunction with (Bi[subscript x]Sb[subscript 1−x])[subscript 2]Te[subscript 3], a topological insulator. The non-equilibrium magnon population established at the interface can decay in part by interactions of magnons with electrons near the Fermi energy of the topological insulator. When this decay channel is made active by tuning (Bi[subscript x]Sb[subscript 1−x])[subscript 2]Te[subscript 3] into a bulk insulator, a large electromotive force emerges in the direction perpendicular to the in-plane magnetization of yttrium iron garnet. The enhanced, tunable SSE which occurs when the Fermi level lies in the bulk gap offers unique advantages over the usual SSE in metals and therefore opens up exciting possibilities in spintronics.