|
|
|
|
| LEADER |
01842 am a22002773u 4500 |
| 001 |
111995 |
| 042 |
|
|
|a dc
|
| 100 |
1 |
0 |
|a Jo, Won Jun
|e author
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Chemical Engineering
|e contributor
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
|
| 100 |
1 |
0 |
|a Gleason, Karen K.
|e contributor
|
| 100 |
1 |
0 |
|a Jo, Won Jun
|e contributor
|
| 100 |
1 |
0 |
|a Borrelli, David C
|e contributor
|
| 100 |
1 |
0 |
|a Bulovic, Vladimir
|e contributor
|
| 100 |
1 |
0 |
|a Gleason, Karen K
|e contributor
|
| 700 |
1 |
0 |
|a Borrelli, David C
|e author
|
| 700 |
1 |
0 |
|a Bulovic, Vladimir
|e author
|
| 700 |
1 |
0 |
|a Gleason, Karen K
|e author
|
| 245 |
0 |
0 |
|a Photovoltaic effect by vapor-printed polyselenophene
|
| 260 |
|
|
|b Elsevier,
|c 2017-10-30T14:53:03Z.
|
| 856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/111995
|
| 520 |
|
|
|a Polyselenophene (PSe) donor layers are successfully integrated into organic photovoltaic devices (OPV) for the first time. Thin, patterned films of this insoluble semiconductor were fabricated using a vacuum-based vapor-printing technique, oxidative chemical vapor deposition (oCVD) combined with in-situ shadow masking. The vapor-printed PSe exhibits a reduced optical bandgap of 1.76 eV and enhanced photo-responsivity in the red compared to its sulfur containing analog, polythiophene. These relative advantages are most likely explained by selenium's enhanced electron-donating character compared to sulfur. The HOMO level of PSe was determined to be at −4.85 eV. The maximum power conversion efficiency achieved was 0.4% using a bilayer heterojunction device architecture with C₆₀ as the donor.
|
| 520 |
|
|
|a United States. Army Research Office (W911NF-13-D-0001)
|
| 546 |
|
|
|a en_US
|
| 655 |
7 |
|
|a Article
|
| 773 |
|
|
|t Organic Electronics
|
