The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thin-film piezoelectric and ferr...

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Main Authors: Arutt, Charles N (Author), Alles, Michael L (Author), Liao, Wenjun (Author), Gong, Huiqi (Author), Davidson, Jim L (Author), Schrimpf, Ronald D (Author), Reed, Robert A (Author), Weller, Robert A (Author), Bolotin, Kirill (Author), Nicholl, Ryan (Author), Pham, Thang Toan (Author), Zettl, Alex (Author), Li, Mo (Author), Alphenaar, Bruce W (Author), Lin, Ji-Tzuoh (Author), Shurva, Pranoy Deb (Author), McNamara, Shamus (Author), Walsh, Kevin M (Author), Feng, Philip X-L (Author), Hutin, Louis (Author), Ernst, Thomas (Author), Homeijer, Brian D (Author), Polcawich, Ronald G (Author), Proie, Robert M (Author), Jones, Jacob L (Author), Glaser, Evan R (Author), Cress, Cory D (Author), Bassiri-Gharb, Nazanin (Author), Du, Qingyang (Contributor), Hu, Juejun (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: IOP Publishing, 2017-12-08T14:52:06Z.
Subjects:
Online Access:Get fulltext
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100 1 0 |a Arutt, Charles N  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Materials Science and Engineering  |e contributor 
100 1 0 |a Hu, Juejun  |e contributor 
100 1 0 |a Du, Qingyang  |e contributor 
100 1 0 |a Hu, Juejun  |e contributor 
700 1 0 |a Alles, Michael L  |e author 
700 1 0 |a Liao, Wenjun  |e author 
700 1 0 |a Gong, Huiqi  |e author 
700 1 0 |a Davidson, Jim L  |e author 
700 1 0 |a Schrimpf, Ronald D  |e author 
700 1 0 |a Reed, Robert A  |e author 
700 1 0 |a Weller, Robert A  |e author 
700 1 0 |a Bolotin, Kirill  |e author 
700 1 0 |a Nicholl, Ryan  |e author 
700 1 0 |a Pham, Thang Toan  |e author 
700 1 0 |a Zettl, Alex  |e author 
700 1 0 |a Li, Mo  |e author 
700 1 0 |a Alphenaar, Bruce W  |e author 
700 1 0 |a Lin, Ji-Tzuoh  |e author 
700 1 0 |a Shurva, Pranoy Deb  |e author 
700 1 0 |a McNamara, Shamus  |e author 
700 1 0 |a Walsh, Kevin M  |e author 
700 1 0 |a Feng, Philip X-L  |e author 
700 1 0 |a Hutin, Louis  |e author 
700 1 0 |a Ernst, Thomas  |e author 
700 1 0 |a Homeijer, Brian D  |e author 
700 1 0 |a Polcawich, Ronald G  |e author 
700 1 0 |a Proie, Robert M  |e author 
700 1 0 |a Jones, Jacob L  |e author 
700 1 0 |a Glaser, Evan R  |e author 
700 1 0 |a Cress, Cory D  |e author 
700 1 0 |a Bassiri-Gharb, Nazanin  |e author 
700 1 0 |a Du, Qingyang  |e author 
700 1 0 |a Hu, Juejun  |e author 
245 0 0 |a The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs) 
260 |b IOP Publishing,   |c 2017-12-08T14:52:06Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/112648 
520 |a The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III-V materials, thin-film piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS₂). The miniaturization, functionality and low-power operation offered by these types of devices are attractive for many application areas including physical sciences, medical, space and military uses, where exposure to radiation is a reliability consideration. Understanding the impact of radiation on these materials and devices is necessary for applications in radiation environments. 
520 |a Defense Threat Reduction Agency (DTRA) (Grant HDTRA1-15-1-0027) 
520 |a Defense Threat Reduction Agency (DTRA) (Grant HDTRA1-15-1-0035) 
520 |a Defense Threat Reduction Agency (DTRA) (Grant HDTRA1-15-1-0036) 
520 |a Defense Threat Reduction Agency (DTRA) (Grant HDTRA1-15-1-0039) 
520 |a Defense Threat Reduction Agency (DTRA) (Grant HDTRA1-15-1-0060) 
546 |a en_US 
655 7 |a Article 
773 |t Semiconductor Science and Technology