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|a Zhang, H.
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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|a Li, James
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|a Tersoff, J.
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|a Xu, S.
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|a Chen, H.
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|a Zhang, Q.
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|a Zhang, K.
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|a Yang, Y.
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|a Lee, C.-S.
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|a Tu, K.-N.
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|a Lu, Y.
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|a Li, James
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|a Approaching the ideal elastic strain limit in silicon nanowires
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|b American Association for the Advancement of Science (AAAS),
|c 2018-02-15T16:11:13Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/113684
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|a Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising "elastic strain engineering" applications.
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|a Article
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|t Science Advances
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