Approaching the ideal elastic strain limit in silicon nanowires

Approaching the ideal elastic strain limit in silicon nanowires

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~1...

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Bibliographic Details
Main Authors: Zhang, H. (Author), Tersoff, J. (Author), Xu, S. (Author), Chen, H. (Author), Zhang, Q. (Author), Zhang, K. (Author), Yang, Y. (Author), Lee, C.-S (Author), Tu, K.-N (Author), Lu, Y. (Author), Li, James (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS), 2018-02-15T16:11:13Z.
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