Approaching the ideal elastic strain limit in silicon nanowires
Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~1...
Main Authors: | Zhang, H. (Author), Tersoff, J. (Author), Xu, S. (Author), Chen, H. (Author), Zhang, Q. (Author), Zhang, K. (Author), Yang, Y. (Author), Lee, C.-S (Author), Tu, K.-N (Author), Lu, Y. (Author), Li, James (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Association for the Advancement of Science (AAAS),
2018-02-15T16:11:13Z.
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Subjects: | |
Online Access: | Get fulltext |
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