Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

• Main Authors: Nandi, D. (Author), Shain, K. (Author), Lee, G. H. (Author), Huang, K.-F (Author), Chang, Cui-Zu (Author), Ou, Yunbo (Author), Lee, S. P. (Author), Ward, J. (Author), Moodera, J. S. (Author), Kim, P. (Author), Yacoby, A. (Author), Sodemann Villadiego, Inti A. (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: American Physical Society, 2018-04-19T18:50:57Z.
• Subjects: Article
• Online Access: Get fulltext

We report magnetotransport measurements on magnetically doped (Bi,Sb)[subscript 2]Te[subscript 3] films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.