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115171 |
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|a Lin, Hongtao
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|a Massachusetts Institute of Technology. Center for Materials Science and Engineering
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|a Massachusetts Institute of Technology. Materials Processing Center
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|a Lin, Hongtao
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|a Luo, Zhengqian
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|a Gu, Tian
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|a Kimerling, Lionel C
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|a Wada, Kazumi
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|a Agarwal, Anuradha
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|a Hu, Juejun
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|a Luo, Zhengqian
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|a Gu, Tian
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|a Kimerling, Lionel C
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|a Wada, Kazumi
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|a Agarwal, Anuradha
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|a Hu, Juejun
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|a Mid-infrared integrated photonics on silicon: a perspective
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|b Walter de Gruyter GmbH,
|c 2018-05-02T17:09:27Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/115171
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|a The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies. Keywords: mid-IR; integrated photonics; silicon photonics; spectrometer; optical sensor
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|a United States. National Nuclear Security Administration (Grant DE-NA0002509)
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|a United States. Defense Threat Reduction Agency (Grant HDTRA1-13-1-0001)
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|a National Science Foundation (U.S.) (Award 1453218)
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|a National Science Foundation (U.S.) (Award 1506605)
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|a National Natural Science Foundation (China) (Grant 61475129)
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|a Article
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|t Nanophotonics
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