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|a Yang, W.
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|a Massachusetts Institute of Technology. Department of Physics
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|a Mailoa, Jonathan P
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|a Buonassisi, T.
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|a Akey, A. J.
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|a Smillie, L. A.
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|a Johnson, B. C.
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|a McCallum, J. C.
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|a Macdonald, D.
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|a Aziz, M. J.
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|a Williams, J. S.
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|a Mailoa, Jonathan P
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|a Buonassisi, T.
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|a Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
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|b American Physical Society,
|c 2018-05-21T14:50:32Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/115535
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|a Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1×10[superscript 20] cm[superscript −3]) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as ∼3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics.
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|a en
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|a Article
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|t Physical Review Materials
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