Large and persistent photoconductivity due to hole-hole correlation in CdS

Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photogenerated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become k...

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Bibliographic Details
Main Authors: Yin, Han (Contributor), Akey, Austin (Author), Jaramillo, Rafael (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2018-08-13T15:42:52Z.
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