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|a dc
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|a Teraji, T.
|e author
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
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|a Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
|e contributor
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|a Massachusetts Institute of Technology. Plasma Science and Fusion Center
|e contributor
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|a Massachusetts Institute of Technology. Research Laboratory of Electronics
|e contributor
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|a Cappellaro, Paola
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|a Marseglia, Luca
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|a Saha, Kasturi
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|a Ajoy, Ashok
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|a Schroeder, Timo
|e contributor
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|a Englund, Dirk R.
|e contributor
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|a Cappellaro, Paola
|e contributor
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|a Isoya, J.
|e author
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|a Jelezko, F.
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|a Walsworth, R.
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|a Pacheco, J. L.
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|a Perry, D. L.
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|a Bielejec, E. S.
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|a Marseglia, Luca
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|a Saha, Kasturi
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|a Ajoy, Ashok
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|a Schroeder, Timo
|e author
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|a Englund, Dirk R.
|e author
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|a Cappellaro, Paola
|e author
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|a A bright nanowire single photon source
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|b Optical Society,
|c 2018-10-11T14:16:04Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/118425
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|a Silicon-vacancy (SiV) centers in diamond are bright sources of indistinguishable single photons. We report fabrication of nanowires coupled to single SiV by deterministic ion implantation, yielding greatly enhanced light coupling compared to SiV in bulk.
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|a en_US
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|a Article
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|t Conference on Lasers and Electro-Optics
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