Femtosecond laser amorphization of tellurium

Polycrystalline tellurium becomes amorphous after irradiation with strong femtosecond pulses. The amorphization is sensitive to the initial temperature but not very sensitive to the temporal profile of the optical excitation. Above the amorphization threshold, single-shot transient reflectivity trac...

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Bibliographic Details
Main Authors: Cheng, Yu-Hsiang (Contributor), Teitelbaum, Samuel Welch (Contributor), Gao, Frank Y. (Contributor), Nelson, Keith Adam (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Chemistry (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2018-11-05T20:53:55Z.
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Online Access:Get fulltext
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042 |a dc 
100 1 0 |a Cheng, Yu-Hsiang  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Chemistry  |e contributor 
100 1 0 |a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science  |e contributor 
100 1 0 |a Cheng, Yu-Hsiang  |e contributor 
100 1 0 |a Teitelbaum, Samuel Welch  |e contributor 
100 1 0 |a Gao, Frank Y.  |e contributor 
100 1 0 |a Nelson, Keith Adam  |e contributor 
700 1 0 |a Teitelbaum, Samuel Welch  |e author 
700 1 0 |a Gao, Frank Y.  |e author 
700 1 0 |a Nelson, Keith Adam  |e author 
245 0 0 |a Femtosecond laser amorphization of tellurium 
260 |b American Physical Society,   |c 2018-11-05T20:53:55Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/118901 
520 |a Polycrystalline tellurium becomes amorphous after irradiation with strong femtosecond pulses. The amorphization is sensitive to the initial temperature but not very sensitive to the temporal profile of the optical excitation. Above the amorphization threshold, single-shot transient reflectivity traces show clear coherent phonon oscillations within 1 ps. These results suggest that amorphization is due to thermal melting rather than nonthermal melting or switching for pump fluences up to the ablation threshold. 
520 |a National Science Foundation (U.S.) (Grant 1665383) 
520 |a United States. Office of Naval Research (Grant N00014-12-1-0530) 
546 |a en 
655 7 |a Article 
773 |t Physical Review B