Chip-Integrated Voltage Sources for Control of Trapped Ions

• Main Authors: Stuart, J. Scott (Contributor), Panock, Richard L. (Contributor), Bruzewicz, Colin D. (Contributor), Sedlacek, Jonathon (Contributor), McConnell, Robert P. (Contributor), Chuang, Isaac (Contributor), Sage, Jeremy M. (Contributor), Chiaverini, John (Contributor)
• Other Authors: Lincoln Laboratory (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: American Physical Society, 2019-02-26T20:36:27Z.
• Subjects: Article
• Online Access: Get fulltext

 Trapped-ion quantum-information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion trap that incorporates monolithically integrated high-voltage complementary metal-oxide semiconductor (CMOS) electronics (±8V full swing) to generate surface-electrode control potentials without the need for external analog voltage sources. A serial bus programs an array of 16 digital-to-analog converters (DACs) within a single chip that apply voltages to segmented electrodes on the chip to control ion motion. Additionally, we present the incorporation of an integrated circuit that uses an analog switch to reduce voltage noise on trap electrodes due to the integrated amplifiers by over 50 dB. We verify the function of our integrated electronics by performing diagnostics with trapped ions and find noise and speed performance similar to those that we observe using external control elements.