A cryogenic surface-electrode elliptical ion trap for quantum simulation

Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, wh...

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Bibliographic Details
Main Authors: Clark, Robert J. (Author), Lin, Ziliang (Author), Diab, Kenan S (Author), Chuang, Isaac L. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor), MIT-Harvard Center for Ultracold Atoms (Contributor)
Format: Article
Language:English
Published: AIP Publishing, 2019-06-19T15:42:05Z.
Subjects:
Online Access:Get fulltext
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100 1 0 |a Clark, Robert J.  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Physics  |e contributor 
100 1 0 |a MIT-Harvard Center for Ultracold Atoms  |e contributor 
700 1 0 |a Lin, Ziliang  |e author 
700 1 0 |a Diab, Kenan S  |e author 
700 1 0 |a Chuang, Isaac L.  |e author 
245 0 0 |a A cryogenic surface-electrode elliptical ion trap for quantum simulation 
260 |b AIP Publishing,   |c 2019-06-19T15:42:05Z. 
856 |z Get fulltext  |u https://hdl.handle.net/1721.1/121359 
520 |a Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, which would enable higher simulated coupling rates, as well as interactions based on magnetic forces generated by currents which may be incorporated into the trap structure. Working in an 11 K cryogenic environment, we experimentally verify to within 10 a numerical model of the structure of ion crystals in the trap, given the measured trap anisotropy. We also explore the possibility of implementing quantum simulation using magnetic forces, and calculate J -coupling rates on the order of 10[superscript 3] s[superscript -1] for a trap scale of 10μm, using a current of 1 A. 
546 |a en 
655 7 |a Article 
773 |t Journal of Applied Physics