Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation o...

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Bibliographic Details
Main Authors: Singh, Neetesh Kumar (Author), Xin, Ming (Author), Vermeulen, Diedrik Rene Georgette (Author), Shtyrkova, Katia (Author), Li, Nanxi (Author), Callahan, Patrick T (Author), Magden, Emir Salih (Author), Ruocco, Alfonso (Author), Fahrenkopf, Nicholas (Author), Baiocco, Christopher (Author), Kuo, Bill P-P (Author), Radic, Stojan (Author), Ippen, Erich Peter (Author), Kartner, Franz X. (Author), Watts, Michael (Author)
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Springer Science and Business Media LLC, 2020-03-25T12:44:51Z.
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