Voltage-gated optics and plasmonics enabled by solid-state proton pumping

Devices with locally-addressable and dynamically tunable optical properties underpin emerging technologies such as high-resolution reflective displays and dynamic holography. The optical properties of metals such as Y and Mg can be reversibly switched by hydrogen loading, and hydrogen-switched mirro...

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Bibliographic Details
Main Authors: Huang, Mantao (Author), Tan, Aik Jun (Author), Büttner, Felix (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Springer Science and Business Media LLC, 2020-04-13T17:50:20Z.
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Online Access:Get fulltext
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042 |a dc 
100 1 0 |a Huang, Mantao  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Materials Science and Engineering  |e contributor 
700 1 0 |a Tan, Aik Jun  |e author 
700 1 0 |a Büttner, Felix  |e author 
245 0 0 |a Voltage-gated optics and plasmonics enabled by solid-state proton pumping 
260 |b Springer Science and Business Media LLC,   |c 2020-04-13T17:50:20Z. 
856 |z Get fulltext  |u https://hdl.handle.net/1721.1/124567 
520 |a Devices with locally-addressable and dynamically tunable optical properties underpin emerging technologies such as high-resolution reflective displays and dynamic holography. The optical properties of metals such as Y and Mg can be reversibly switched by hydrogen loading, and hydrogen-switched mirrors and plasmonic devices have been realized, but challenges remain to achieve electrical, localized and reversible control. Here we report a nanoscale solid-state proton switch that allows for electrical control of optical properties through electrochemical hydrogen gating. We demonstrate the generality and versatility of this approach by realizing tunability of a range of device characteristics including transmittance, interference color, and plasmonic resonance. We further discover and exploit a giant modulation of the effective refractive index of the gate dielectric. The simple gate structure permits device thickness down to ~20 nanometers, which can enable device scaling into the deep subwavelength regime, and has potential applications in addressable plasmonic devices and reconfigurable metamaterials. 
520 |a National Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award DMR-1419807) 
520 |a United States. Department of Energy (Contract DE-SC0012704) 
546 |a en 
690 |a General Biochemistry, Genetics and Molecular Biology 
690 |a General Physics and Astronomy 
690 |a General Chemistry 
655 7 |a Article 
773 |t 10.1038/s41467-019-13131-3 
773 |t Nature communications