Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm
We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrat...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Multidisciplinary Digital Publishing Institute,
2020-05-21T19:32:18Z.
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Online Access: | Get fulltext |
Summary: | We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si[subscript 3]N[subscript 4] and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si[subscript 3]N[subscript 4]-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint. Keywords: germanium; silicon nitride; optical interconnect; Franz-Keldysh effect |
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