Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

• Main Authors: Chen, Ke (Author), Song, Bai (Author), Ravichandran, Navaneetha K. (Author), Zheng, Qiye (Author), Chen, Xi (Author), Lee, Hwijong (Author), Sun, Haoran (Author), Li, Sheng (Author), Udalamatta Gamage, Geethal Amila Gamage (Author), Tian, Fei (Author), Ding, Zhiwei (Author), Song, Qichen (Author), Rai, Akash (Author), Wu, Hanlin (Author), Koirala, Pawan (Author), Schmidt, Aaron J (Author), Watanabe, Kenji (Author), Lv, Bing (Author), Ren, Zhifeng (Author), Shi, Li (Author), Cahill, David G. (Author), Taniguchi, Takashi (Author), Broido, David (Author), Chen, Gang (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
• Format: Article
• Language: English
• Published: American Association for the Advancement of Science (AAAS), 2020-10-06T21:48:52Z.
• Subjects: Article
• Online Access: Get fulltext

 Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched [superscript 10]B or [superscript 11]B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.