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|a Chen, Ke
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|a Massachusetts Institute of Technology. Department of Mechanical Engineering
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|a Song, Bai
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|a Ravichandran, Navaneetha K.
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|a Zheng, Qiye
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|a Chen, Xi
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|a Lee, Hwijong
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|a Sun, Haoran
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|a Li, Sheng
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|a Udalamatta Gamage, Geethal Amila Gamage
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|a Tian, Fei
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|a Ding, Zhiwei
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|a Song, Qichen
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|a Rai, Akash
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|a Wu, Hanlin
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|a Koirala, Pawan
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|a Schmidt, Aaron J
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|a Watanabe, Kenji
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|a Lv, Bing
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|a Ren, Zhifeng
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|a Shi, Li
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|a Cahill, David G.
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|a Taniguchi, Takashi
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|a Broido, David
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|a Chen, Gang
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|a Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
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|b American Association for the Advancement of Science (AAAS),
|c 2020-10-06T21:48:52Z.
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|z Get fulltext
|u https://hdl.handle.net/1721.1/127819
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|a Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched [superscript 10]B or [superscript 11]B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.
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|a Office of Naval Research (Grant N00014-16-1-2436)
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|a Article
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|t Science
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