Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

• Main Authors: Peyskens, Frederic Olivier (Author), Chakraborty, Chitraleema (Author), Englund, Dirk R. (Author)
• Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: Springer Science and Business Media LLC, 2021-02-02T17:27:21Z.
• Subjects: Article
• Online Access: Get fulltext

Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
United States. Army Research Office. Multidisciplinary University Research Initiative (Grant W911NF-18-1-0431)