Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager

Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager

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© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or...

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Bibliographic Details
Main Authors: Milanowski, Randall (Author), Aniceto, Raichelle (Author), Hardy, Fred (Author), Vermeire, Bert (Author), Jacox, Michael (Author), Moro, Slaven (Author), Cahoy, Kerri (Author)
Other Authors: Massachusetts Institute of Technology. Department of Aeronautics and Astronautics (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2021-12-22T17:36:12Z.
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700 1 0 |a Aniceto, Raichelle  |e author 
700 1 0 |a Hardy, Fred  |e author 
700 1 0 |a Vermeire, Bert  |e author 
700 1 0 |a Jacox, Michael  |e author 
700 1 0 |a Moro, Slaven  |e author 
700 1 0 |a Cahoy, Kerri  |e author 
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520 |a © 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred. 
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773 |t 10.1109/nsrec.2017.8115465 

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