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137914.2 |
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|a dc
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|a Milanowski, Randall
|e author
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|a Massachusetts Institute of Technology. Department of Aeronautics and Astronautics
|e contributor
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|a Aniceto, Raichelle
|e author
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|a Hardy, Fred
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|a Vermeire, Bert
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|a Jacox, Michael
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|a Moro, Slaven
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|a Cahoy, Kerri
|e author
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|a Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2021-12-22T17:36:12Z.
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|z Get fulltext
|u https://hdl.handle.net/1721.1/137914.2
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|a © 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
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|a en
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|a Article
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|t 10.1109/nsrec.2017.8115465
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