Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices

Department of Defense (DoD)

Bibliographic Details
Main Authors:	Yin, Han (Author), Kumar, Abinash (Author), LeBeau, James M. (Author), Jaramillo, R. (Author)
Format:	Article
Language:	English
Published:	American Physical Society (APS), 2022-01-31T18:32:40Z.
Subjects:	Article
Online Access:	Get fulltext


LEADER	00702 am a22002053u 4500
001	139808
042			\|a dc
100	1	0	\|a Yin, Han \|e author
700	1	0	\|a Kumar, Abinash \|e author
700	1	0	\|a LeBeau, James M. \|e author
700	1	0	\|a Jaramillo, R. \|e author
245	0	0	\|a Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices
260			\|b American Physical Society (APS), \|c 2022-01-31T18:32:40Z.
856			\|z Get fulltext \|u https://hdl.handle.net/1721.1/139808
520			\|a Department of Defense (DoD)
520			\|a National Science Foundation (NSF)
690			\|a General Physics and Astronomy
655	7		\|a Article
773			\|t 10.1103/physrevapplied.15.014014
773			\|t Physical Review Applied

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