Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy

Here, we apply cathodoluminescence in scanning transmission electron microscopy to infer the influence of dislocation strain fields on the formation of point defect complexes in Si doped AlN. In addition to identifying non-radiative recombination centers, tracking Si related defect emission energies...

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Bibliographic Details
Main Authors:	Hauwiller, Matthew R (Author), Stowe, David (Author), Eldred, Timothy B (Author), Mita, Seiji (Author), Collazo, Ramon (Author), Sitar, Zlatko (Author), LeBeau, James (Author)
Format:	Article
Language:	English
Published:	AIP Publishing, 2022-05-19T16:37:48Z.
Subjects:	Article
Online Access:	Get fulltext

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