Conductance in Co/Al[subscript 2]O[subscript 3]/Si/Al[subscript 2]O[subscript 3] permalloy with asymmetrically doped barrier
We report on dependence of conductance and tunnelling magnetoresistance on bias voltage at different temperatures down to 2 K in Co|Al[subscript 2]O[subscript 3](10 Å)|Si(δ)|Al[subscript 2]O[subscript 3](2 Å)|Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are u...
Main Authors: | Guerrero, R. (Author), Aliev, F. G. (Author), Villar, R. (Author), Santos, Tiffany S. (Contributor), Moodera, Jagadeesh (Contributor), Dugaev, V. K. (Author), Barnas, J. (Author) |
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Other Authors: | Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Physical Society,
2010-10-04T16:18:57Z.
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Subjects: | |
Online Access: | Get fulltext |
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