|
|
|
|
LEADER |
01719 am a22002533u 4500 |
001 |
61764 |
042 |
|
|
|a dc
|
100 |
1 |
0 |
|a Steinberg, Hadar
|e author
|
100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Physics
|e contributor
|
100 |
1 |
0 |
|a Jarillo-Herrero, Pablo
|e contributor
|
100 |
1 |
0 |
|a Steinberg, Hadar
|e contributor
|
100 |
1 |
0 |
|a Gardner, Dillon Richard
|e contributor
|
100 |
1 |
0 |
|a Lee, Young S.
|e contributor
|
100 |
1 |
0 |
|a Jarillo-Herrero, Pablo
|e contributor
|
700 |
1 |
0 |
|a Gardner, Dillon Richard
|e author
|
700 |
1 |
0 |
|a Lee, Young S.
|e author
|
700 |
1 |
0 |
|a Jarillo-Herrero, Pablo
|e author
|
245 |
0 |
0 |
|a Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
|
260 |
|
|
|b American Chemical Society,
|c 2011-03-23T13:13:27Z.
|
856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/61764
|
520 |
|
|
|a Electronic transport experiments involving the topologically protected states found at the surface of Bi[subscript 2]Se[subscript 3] and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transport measurements on thin (<100 nm) Bi[subscript 2]Se[subscript 3] devices and show that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. The conductance dependence on geometry, gate voltage, and temperature all indicate that transport is governed by parallel surface and bulk contributions. Moreover, the conductance dependence on top-gate voltage is ambipolar, consistent with tuning between electrons and hole carriers at the surface.
|
546 |
|
|
|a en_US
|
655 |
7 |
|
|a Article
|
773 |
|
|
|t Nano Letters
|