Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
Electronic transport experiments involving the topologically protected states found at the surface of Bi[subscript 2]Se[subscript 3] and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material. Here we report on electronic transp...
Main Authors: | Steinberg, Hadar (Contributor), Gardner, Dillon Richard (Contributor), Lee, Young S. (Contributor), Jarillo-Herrero, Pablo (Contributor) |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Physics (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Chemical Society,
2011-03-23T13:13:27Z.
|
Subjects: | |
Online Access: | Get fulltext |
Similar Items
-
Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator Bi2Se3 Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy
by: Wang, Y. H., et al.
Published: (2013) -
Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
by: Fatemi, Valla, et al.
Published: (2014) -
Quantum transport in nanodevices
by: Cook, Brandon Girard
Published: (2012) -
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
by: Steinberg, Hadar, et al.
Published: (2012) -
Strain and electric field tunable electronic transport in armchair phosphorene nanodevice with normal-metal electrodes
by: Guo-Hong Chen, et al.
Published: (2020-10-01)