Giant Spin-Hall Effect Induced by the Zeeman Interaction in Graphene

• Main Authors: Levitov, Leonid (Contributor), Abanin, Dmitry A. (Contributor), Gorbachev, R. V. (Author), Novoselov, Kostya S. (Author), Geim, A. K. (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: American Physical Society, 2011-10-19T20:41:14Z.
• Subjects: Article
• Online Access: Get fulltext

We propose a new approach to generate and detect spin currents in graphene, based on a large spin-Hall response arising near the neutrality point in the presence of an external magnetic field. Spin currents result from the imbalance of the Hall resistivity for the spin-up and spin-down carriers induced by the Zeeman interaction, and do not involve a spin-orbit interaction. Large values of the spin-Hall response achievable in moderate magnetic fields produced by on-chip sources, and up to room temperature, make the effect viable for spintronics applications.
Aspen Center for Physics
United States. Office of Naval Research (Grant No. N00014-09-1- 0724)