Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors

Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors

We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon-oxynitride channel waveguides. By comparing the evanescent coupling from low index-contrast waveguides and compact, high index-contrast waveguides, the dependence of evanescent coupling b...

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Bibliographic Details
Main Authors: Ahn, Donghwan (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2011-12-09T20:11:35Z.
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