Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy

• Main Authors: Pan, Z. -H (Author), Fedorov, A. V. (Author), Gardner, Dillon Richard (Contributor), Lee, Young S. (Contributor), Chu, S. (Contributor), Valla, T. (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Li, Young S. (Contributor)
• Format: Article
• Language: English
• Published: American Physical Society, 2012-07-13T13:39:11Z.
• Subjects: Article
• Online Access: Get fulltext

 Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi[subscript 2]Se[aubscript 3], by high-resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room-temperature electronic devices.