Spectral selective mid-infrared detector on a silicon platform

Spectral selective mid-infrared detector on a silicon platform

We report the design, fabrication, and characterization of spectral selective mid-infrared PbTe photodetector pixels monolithically integrated on a silicon platform. We demonstrate spectral selectivity with a peak responsivity of 65.4 V/W.

Bibliographic Details
Main Authors: Wang, Jianfei (Contributor), Hu, Juejun (Contributor), Sun, Xiaochen (Contributor), Becla, Piotr (Contributor), Agarwal, Anuradha Murthy (Contributor), Kimerling, Lionel C. (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-07-25T15:16:42Z.
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