Characterization of sige-detector arrays for visible-NIR imaging sensor applications

• Main Authors: Sood, Ashok K. (Author), Richwine, Robert A. (Author), Sood, Adam W. (Author), Puri, Yash R. (Author), DiLello, Nicole Ann (Contributor), Hoyt, Judy L. (Contributor), Akinwande, Tayo I. (Contributor), Dhar, Nibir (Author), Balcerak, Raymond S. (Author), Bramhall, Thomas G. (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
• Format: Article
• Language: English
• Published: SPIE, 2012-10-12T18:19:47Z.
• Subjects: Article
• Online Access: Get fulltext

 SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS Bolometers.