Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene
Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q=0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q≠0. The...
Main Authors: | Araujo, Paulo Antonio Trinidade (Contributor), Mafra, Daniela Lopes (Contributor), Sato, K. (Author), Saito, R. (Author), Kong, Jing (Contributor), Dresselhaus, Mildred (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Physical Society,
2012-10-18T14:23:00Z.
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Subjects: | |
Online Access: | Get fulltext |
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