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|a Wang, Jianfei
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|a MIT Materials Research Laboratory
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Microphotonics Center
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|a Wang, Jianfei
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|a Hu, Juejun
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|a Becla, Piotr
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|a Agarwal, Anuradha Murthy
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|a Kimerling, Lionel C.
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|a Hu, Juejun
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|a Becla, Piotr
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|a Kimerling, Lionel C.
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|a Agarwal, Anuradha Murthy
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|a Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study
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|b American Institute of Physics (AIP),
|c 2013-07-30T18:34:43Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/79729
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|a In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation in the films by diffusion. Carrier concentration as low as 10[superscript 17] cm[superscript −3] is identified to be the consequence of Fermi level pinning induced by the diffused oxygen. The successful demonstration of IR-sensitive PbTe films without the need for high-temperature processing presents an important step toward monolithic integration of mid-wave PbTe infrared detectors on Si read-out integrated circuits (ROICs).
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|a Article
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|t Journal of Applied Physics
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