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|a Mentzel, Tamar
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|a Massachusetts Institute of Technology. Department of Chemistry
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|a Massachusetts Institute of Technology. Department of Physics
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|a Kastner, Marc
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|a Mentzel, Tamar
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|a Wanger, Darcy Deborah
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|a Ray, Nirat
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|a Walker, Brian J.
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|a Strasfeld, David B.
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|a Bawendi, Moungi G.
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|a Kastner, Marc
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|a Wanger, Darcy Deborah
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|a Ray, Nirat
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|a Walker, Brian J.
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|a Strasfeld, David B.
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|a Bawendi, Moungi G.
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|a Kastner, Marc
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|a Nanopatterned Electrically Conductive Films of Semiconductor Nanocrystals
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|a Nanopatterned, Electrically Conductive Films of Semiconductor Nanocrystals
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|b American Chemical Society,
|c 2013-08-05T19:45:09Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/79791
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|a We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as cracking and clustering that typically exist in larger-scale films. We find that the electrical conductivity of the nanoscale films is 180 times higher than that of drop-cast, microscopic films made of the same type of nanocrystal. Our technique for forming the nanoscale films is based on electron-beam lithography and a lift-off process. The patterns have dimensions as small as 30 nm and are positioned on a surface with 30 nm precision. The method is flexible in the choice of nanocrystal core-shell materials and ligands. We demonstrate patterns with PbS, PbSe, and CdSe cores and Zn[subscript 0.5]Cd[subscript 0.5]Se-Zn[subscript 0.5]Cd[subscript 0.5]S core-shell nanocrystals with a variety of ligands. We achieve unprecedented versatility in integrating semiconductor nanocrystal films into device structures both for studying the intrinsic electrical properties of the nanocrystals and for nanoscale optoelectronic applications.
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|a United States. Army Research Office (contract W911 NF-07-D-0004)
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|a United States. Dept. of Energy (award number DE-FG02-08ER46515)
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|a Hertz Foundation (Fellowship)
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|a United States. Dept. of Defense (National Defense Science and Engineering Fellowship)
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|a Samsung Advanced Institute of Technology
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|a en_US
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|a Article
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|t Nano Letters
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