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|a Zhang, Qian
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|a Massachusetts Institute of Technology. Department of Mechanical Engineering
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|a Chen, Gang
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|a Esfarjani, Keivan
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|a Chen, Gang
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|a Cao, Feng
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|a Lukas, Kevin
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|a Liu, Weishu
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|a Esfarjani, Keivan
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|a Opeil, Cyril
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|a Broido, David
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|a Parker, David
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|a Singh, David J.
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|a Chen, Gang
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|a Ren, Zhifeng
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|a Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium
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|b American Chemical Society (ACS),
|c 2014-05-09T15:11:57Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/86904
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|a Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10[superscript 19] cm[superscript -3]. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10[superscript -3] W m[superscript -1] K[superscript -2] was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl[superscript 3+] ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.
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|a United States. Dept. of Energy. Office of Basic Energy Sciences (Solid-State Solar-Thermal Energy Conversion Center Award DE-SC0001299)
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|a en_US
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|a Article
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|t Journal of the American Chemical Society
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