Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

• Main Authors: Qian, Xiaofeng (Contributor), Liu, Junwei (Contributor), Fu, Liang (Contributor), Li, Ju (Contributor)
• Other Authors: Massachusetts Institute of Technology. Materials Processing Center (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: American Association for the Advancement of Science (AAAS), 2014-11-21T16:52:10Z.
• Subjects: Article
• Online Access: Get fulltext

 Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insulators in two-dimensional transition metal dichalcogenides with 1T' structure, namely, 1T'-MX[subscript 2] with M = (W, Mo) and X = (Te, Se, S). A structural distortion causes an intrinsic band inversion between chalcogenide-p and metal-d bands. Additionally, spin-orbit coupling opens a gap that is tunable by vertical electric field and strain. We propose a topological field effect transistor made of van der Waals heterostructures of 1T'-MX[subscript 2] and 2D dielectric layers that can be rapidly switched off by electric field through a topological phase transition instead of carrier depletion.