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01853 am a22002413u 4500 |
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96951 |
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|a Ooi, Kelvin J. A.
|e author
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|a Massachusetts Institute of Technology. Department of Chemistry
|e contributor
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|a Hsieh, Chang Yu
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|a Chu, H. S.
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|a Tan, Dawn T. H.
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|a Ang, L. K.
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|a Hsieh, Chang Yu
|e author
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|a Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation
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|b American Physical Society,
|c 2015-05-11T12:26:35Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/96951
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|a Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.
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|a Singapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDG21200106)
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|a Singapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDD21200103)
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|a en
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|a Article
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|t Physical Review Applied
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