|
|
|
|
| LEADER |
02190 am a22003253u 4500 |
| 001 |
97226 |
| 042 |
|
|
|a dc
|
| 100 |
1 |
0 |
|a Powell, D. M.
|e author
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Mechanical Engineering
|e contributor
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Research Laboratory of Electronics
|e contributor
|
| 100 |
1 |
0 |
|a Powell, D. M.
|e contributor
|
| 100 |
1 |
0 |
|a Hofstetter, Jasmin
|e contributor
|
| 100 |
1 |
0 |
|a Fenning, David P.
|e contributor
|
| 100 |
1 |
0 |
|a Buonassisi, Tonio
|e contributor
|
| 700 |
1 |
0 |
|a Hao, R.
|e author
|
| 700 |
1 |
0 |
|a Ravi, T. S.
|e author
|
| 700 |
1 |
0 |
|a Hofstetter, Jasmin
|e author
|
| 700 |
1 |
0 |
|a Fenning, David P.
|e author
|
| 700 |
1 |
0 |
|a Buonassisi, Tonio
|e author
|
| 245 |
0 |
0 |
|a Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
|
| 260 |
|
|
|b American Institute of Physics (AIP),
|c 2015-06-08T18:58:01Z.
|
| 856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/97226
|
| 520 |
|
|
|a We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%.
|
| 520 |
|
|
|a United States. Dept. of Energy (Contract DE-EE0005314)
|
| 520 |
|
|
|a National Science Foundation (U.S.) (United States. Dept. of Energy NSF CA EEC-1041895)
|
| 520 |
|
|
|a American Society for Engineering Education. National Defense Science and Engineering Graduate Fellowship
|
| 520 |
|
|
|a Alexander von Humboldt-Stiftung (Feodor Lynen Postdoctoral Fellowship)
|
| 546 |
|
|
|a en_US
|
| 655 |
7 |
|
|a Article
|
| 773 |
|
|
|t Applied Physics Letters
|
