Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-c...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2015-06-08T18:58:01Z.
|
| Subjects: | |
| Online Access: | Get fulltext |