GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications

• Main Authors: Hering, K.P (Author), Kramm, B. (Author), Meyer, B.K (Author), Brandt, Riley E. (Contributor), Buonassisi, Tonio (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Photovoltaic Research Laboratory (Contributor)
• Format: Article
• Language: English
• Published: Elsevier, 2015-06-09T18:14:52Z.
• Subjects: Article
• Online Access: Get fulltext

Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a thin layer of GaN:Si grown on a sapphire substrate by metal organic vapor deposition. The deposition procedure was followed up by photolithographic structuring and thermal evaporation of metal contacts. For device characterization, J-V characteristics and external quantum efficiency were measured, pointing to a possible energy barrier in the conduction band. To gain further insight X-ray photoelectron spectroscopy was applied.