Topological Valley Currents in Gapped Dirac Materials
Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The sys...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2015-06-29T14:24:29Z.
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| Subjects: | |
| Online Access: | Get fulltext |
| Summary: | Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state. National Science Foundation (U.S.). Center for Integrated Quantum Materials (Grant DMR-1231319) Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies (Contract W911NF-13-D-0001) |
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