Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
We fabricated 9-30 nm half-pitch nested Ls and 13-15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-...
| Main Authors: | , , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier,
2015-09-22T15:19:11Z.
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| Subjects: | |
| Online Access: | Get fulltext |