Le Transistor M.O.S. de puissance : la relaxation thermique et les effets liés à la configuration N-N+ du drain

Le Transistor M.O.S. de puissance : la relaxation thermique et les effets liés à la configuration N-N+ du drain

DESCRIPTION DES PHENOMENES CITES DANS LES TYPES DE TRANSISTORS SUIVANTS: TRANSISTOR VMOS, TRANSISTOR UMOS, TRANSISTOR HEXFET

Bibliographic Details
Main Author:	Gamboa Zuniga, Mariano
Language:	FRE
Published:	Université Paul Sabatier - Toulouse III 1980
Subjects:	[SPI:NANO] Engineering Sciences/Micro and nanotechnologies/Microelectronics TRANSISTOR EFFET CHAMP TRANSISTOR MOS TRANSISTOR VMOS ANALYSE FONCTIONNEMENT RELAXATION THERMIQUE BASSE FREQUENCE DRAIN REGIME SATURATION TRANSISTOR UMOS TRANSISTOR HEXFET THERMAL RELAXATION LOW FREQUENCY
Online Access:	http://tel.archives-ouvertes.fr/tel-00178833 http://tel.archives-ouvertes.fr/docs/00/17/88/33/PDF/2232.pdf

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