Implementation of high voltage Silicon Carbide rectifiers and switches

Implementation of high voltage Silicon Carbide rectifiers and switches

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In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and...

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Bibliographic Details
Main Author: Berthou, Maxime
Language:ENG
Published: INSA de Lyon 2012
Subjects:
[SPI:OTHER] Engineering Sciences/Other
Power Electronics
Schottky Barrier Diode
VMOS - Vertical Metal Oxide Semiconductor
JTE - Junction Termination Extension - Diode
Silicon Carbide
VDMOS - Vertical Diffused Metal Oxide Semiconductor
High temperature
Electronic Commutation
High Voltage Converter
High Temperature Converter
JBS Diode - Jonction Barrier Schottky / MPS Diode - Merged Pin Schottky Diode
Online Access:http://tel.archives-ouvertes.fr/tel-00770661
http://tel.archives-ouvertes.fr/docs/00/77/06/61/PDF/these.pdf
Description
Summary:In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.

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