Implementation of high voltage Silicon Carbide rectifiers and switches
In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and...
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| Language: | ENG |
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INSA de Lyon
2012
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| Online Access: | http://tel.archives-ouvertes.fr/tel-00770661 http://tel.archives-ouvertes.fr/docs/00/77/06/61/PDF/these.pdf |
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