Copper Oxide ALD from a Cu(I) <beta>-Diketonate: Detailed Growth Studies on SiO2 and TaN

Copper Oxide ALD from a Cu(I) <beta>-Diketonate: Detailed Growth Studies on SiO2 and TaN

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The atomic layer deposition (ALD) of copper oxide films from [(<sup>n</sup>Bu<sub>3</sub>P)<sub>2</sub>Cu(acac)] and wet oxygen on SiO<sub>2</sub> and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The re...

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Bibliographic Details
Main Authors: Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Format: Article
Language:English
Published: Technische Universität Chemnitz 2009
Subjects:
info:eu-repo/classification/ddc/620
ddc:620
info:eu-repo/classification/ddc/660
ddc:660
info:eu-repo/classification/ddc/530
ddc:530
Atomschichtepitaxie
Ausgangsmaterial
Beschichten
Diketonate <beta>
Durchstrahlungselektronenmikroskopie
Dünne Schicht
Ellipsometrie
Kraftmikroskopie
Kupferkomplexe
Kupferoxide
Nanopartikel
Nanotechnologie
Schichtwachstum
Siliciumdioxid
Tantalnitride
Atomic Layer Deposition (ALD)
Copper oxide
Kupfer(I)
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901741
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