Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM

• Main Authors: Hong, Seok-Woo, Kang, Seung-Mo, Choi, In-Hyuk, Jung, Seung-Uk, Park, Dong-Sik, Kim, Kyoung-Ho, Choi, Yong-Jin, Lee, Tae-Woo, Lee, Haebum, Cho, In-Soo
• Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
• Format: Others
• Language: English
• Published: Universitätsbibliothek Chemnitz 2016
• Subjects: DRAM; refresh characteristics; DDA (Double Deposited Al); Al void; stress migration; ddc:620; Dynamisches RAM
• Online Access: http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014; http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014; http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf; http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc

In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 between upper and lower Al metal layer by ex-situ deposition technique. We could effectively control the Al void by adapting the DDA layers with different grain structure. From this novel metallization process, we have confirmed the optimal thickness of Al barrier metal to 100Å to be free from Al voids, which makes it possible to improve the static refresh characteristics of DRAM by 17%.