Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM
In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 betwe...
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Universitätsbibliothek Chemnitz
2016
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Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc |
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ndltd-DRESDEN-oai-qucosa.de-bsz-ch1-qucosa-2070142016-07-23T03:29:18Z Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM Hong, Seok-Woo Kang, Seung-Mo Choi, In-Hyuk Jung, Seung-Uk Park, Dong-Sik Kim, Kyoung-Ho Choi, Yong-Jin Lee, Tae-Woo Lee, Haebum Cho, In-Soo DRAM refresh characteristics DDA (Double Deposited Al) Al void stress migration ddc:620 Dynamisches RAM In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 between upper and lower Al metal layer by ex-situ deposition technique. We could effectively control the Al void by adapting the DDA layers with different grain structure. From this novel metallization process, we have confirmed the optimal thickness of Al barrier metal to 100Å to be free from Al voids, which makes it possible to improve the static refresh characteristics of DRAM by 17%. Universitätsbibliothek Chemnitz TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik 2016-07-22 doc-type:conferenceObject application/pdf text/plain application/zip http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 urn:nbn:de:bsz:ch1-qucosa-207014 http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc AMC 2015 – Advanced Metallization Conference eng |
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English |
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DRAM refresh characteristics DDA (Double Deposited Al) Al void stress migration ddc:620 Dynamisches RAM |
spellingShingle |
DRAM refresh characteristics DDA (Double Deposited Al) Al void stress migration ddc:620 Dynamisches RAM Hong, Seok-Woo Kang, Seung-Mo Choi, In-Hyuk Jung, Seung-Uk Park, Dong-Sik Kim, Kyoung-Ho Choi, Yong-Jin Lee, Tae-Woo Lee, Haebum Cho, In-Soo Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
description |
In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 between upper and lower Al metal layer by ex-situ deposition technique. We could effectively control the Al void by adapting the DDA layers with different grain structure. From this novel metallization process, we have confirmed the optimal thickness of Al barrier metal to 100Å to be free from Al voids, which makes it possible to improve the static refresh characteristics of DRAM by 17%.
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author2 |
TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
author_facet |
TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik Hong, Seok-Woo Kang, Seung-Mo Choi, In-Hyuk Jung, Seung-Uk Park, Dong-Sik Kim, Kyoung-Ho Choi, Yong-Jin Lee, Tae-Woo Lee, Haebum Cho, In-Soo |
author |
Hong, Seok-Woo Kang, Seung-Mo Choi, In-Hyuk Jung, Seung-Uk Park, Dong-Sik Kim, Kyoung-Ho Choi, Yong-Jin Lee, Tae-Woo Lee, Haebum Cho, In-Soo |
author_sort |
Hong, Seok-Woo |
title |
Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
title_short |
Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
title_full |
Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
title_fullStr |
Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
title_full_unstemmed |
Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM |
title_sort |
novel double-deposited-aluminum (dda) process for improving al void and refresh characteristics of dram |
publisher |
Universitätsbibliothek Chemnitz |
publishDate |
2016 |
url |
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc |
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