Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM

Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM

In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 betwe...

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Bibliographic Details
Main Authors: Hong, Seok-Woo, Kang, Seung-Mo, Choi, In-Hyuk, Jung, Seung-Uk, Park, Dong-Sik, Kim, Kyoung-Ho, Choi, Yong-Jin, Lee, Tae-Woo, Lee, Haebum, Cho, In-Soo
Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format: Others
Language:English
Published: Universitätsbibliothek Chemnitz 2016
Subjects:
DRAM
refresh characteristics
DDA (Double Deposited Al)
Al void
stress migration
ddc:620
Dynamisches RAM
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014
http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014
http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc

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