Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM
In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 betwe...
Main Authors: | Hong, Seok-Woo, Kang, Seung-Mo, Choi, In-Hyuk, Jung, Seung-Uk, Park, Dong-Sik, Kim, Kyoung-Ho, Choi, Yong-Jin, Lee, Tae-Woo, Lee, Haebum, Cho, In-Soo |
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Other Authors: | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
Format: | Others |
Language: | English |
Published: |
Universitätsbibliothek Chemnitz
2016
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Subjects: | |
Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207014 http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/Hong_Novel_Double-Deposited-Aluminum_%28DDA%29_Process_for_Improving_Al_Void_and_Refresh_Characteristics_of_DRAM.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20701/signatur.txt.asc |
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